We have investigated the redistribution of As during Pd2Si formation with electrical measurements. Our results are in agreement with the earlier findings that part of the shallow implanted As is pushed ahead by the moving silicide-silicon interface at 250°C. We show that, owing to the As redistribution, Pd2Si contacts can be formed to shallow junction diodes without altering the junction properties, because the junction is displaced by the approaching silicide-silicon interface. We also demonstrate that the increase in the As concentration beneath the silicide-silicon interface reduces contact resistance. Finally, we discuss the use of the As redistribution to adjust the barrier height of Schottky diodes and other applications in submicron integrated circuit technology.