Abstract
Recovery of threshold voltage due to high drain or gate voltage and the effects of hot-carrier stressing on the drain breakdown voltage of MOSFET's have been studied. High oxide field causes slow recovery through tunneling detrapping of electrons in both p- and n-MOSFET’s. For n-MOSFET’s, a mechanism of fast recovery is low-level hole injection at high VD. Hot-carrier stressing at high VG causes the drain breakdown voltage to decrease (walk-in). This results in enhanced hole injection thus increasing the rate of subsequent recovery of V,. The breakdown voltage increases then decreases when stressed at low gate voltages.
Original language | English |
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Pages (from-to) | 978-984 |
Number of pages | 7 |
Journal | IEEE Transactions on Electron Devices |
Volume | 35 |
Issue number | 7 |
DOIs | |
State | Published - 1 Jan 1988 |