Recovery of Threshold Voltage After Hot-Carrier Stressing

Tong Chern Ong; M. Levi; Ping Keung Ko; Chen-Ming Hu

doi:10.1109/16.3354

Recovery of Threshold Voltage After Hot-Carrier Stressing

Tong Chern Ong^*, M. Levi, Ping Keung Ko, Chen-Ming Hu

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Article

21 Scopus citations

Abstract

Recovery of threshold voltage due to high drain or gate voltage and the effects of hot-carrier stressing on the drain breakdown voltage of MOSFET's have been studied. High oxide field causes slow recovery through tunneling detrapping of electrons in both p- and n-MOSFET’s. For n-MOSFET’s, a mechanism of fast recovery is low-level hole injection at high VD. Hot-carrier stressing at high VG causes the drain breakdown voltage to decrease (walk-in). This results in enhanced hole injection thus increasing the rate of subsequent recovery of V,. The breakdown voltage increases then decreases when stressed at low gate voltages.

Original language	English
Pages (from-to)	978-984
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	35
Issue number	7
DOIs	https://doi.org/10.1109/16.3354
State	Published - 1 Jan 1988

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Ong, T. C., Levi, M., Ko, P. K., & Hu, C-M. (1988). Recovery of Threshold Voltage After Hot-Carrier Stressing. IEEE Transactions on Electron Devices, 35(7), 978-984. https://doi.org/10.1109/16.3354

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