Record-high 121/62 μa/μm on-currents 3D stacked epi-like Si FETs with and without metal back gate

Chih Chao Yang, Szu Hung Chen, Jia Min Shieh, Wen Hsien Huang, Tung Ying Hsieh, Chang Hong Shen, Tsung Ta Wu, Hsing Hsiang Wang, Yao Jen Lee, Fu Ju Hou, Ci Ling Pan, Kuei Shu Chang-Liao, Chen-Ming Hu, Fu Liang Yang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

14 Scopus citations

Abstract

A sequential layered integration technology that can fabricate 3D stackable epi-like Si FETs with and without metal back gate (MBG) under sub-400°C are proposed in this article. With laser crystallized epi-like Si and CMP thinning processes for channel fabrication, 3D stackable ultra thin body (UTB) n/p-MOSFETs with low-subthreshold swings (88 and 121 mV/dec.) and high on-currents (121 and 62 μA/μm) are demonstrated. With additional metal back gate structure, UTB devices can be desirably operated in a positive or negative threshold voltage range with γ values of 0.51 (n-MOSFETs) and 0.56 (p-MOSFETs) for favoring its applications in 3D logic circuits. In addition, such thin and high quality channel and metal back gate scheme is not only promising for conventional p-n junction device but also junctionless (JL) scheme, which can simplify the fabrication and achieve further scaling.

Original languageEnglish
Title of host publication2013 IEEE International Electron Devices Meeting, IEDM 2013
DOIs
StatePublished - 1 Dec 2013
Event2013 IEEE International Electron Devices Meeting, IEDM 2013 - Washington, DC, United States
Duration: 9 Dec 201311 Dec 2013

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference2013 IEEE International Electron Devices Meeting, IEDM 2013
CountryUnited States
CityWashington, DC
Period9/12/1311/12/13

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