Photoluminescence (PL) measurements under different excitation powers were carried out at low temperature on tensile-strained In0.3Ga0.7As single wells of 6 nm with InGaAs barriers lattice matched to InP substrate. PL measurements taken at 2 K show a main emission band at 0.762 eV probably originating from a type-II transition. The insertion of an ultrathin InAs layer at In0.3Ga0.7As on In0.53Ga0.47As interface reveals an additional feature at 0.711 eV as well as an excited-state luminescence emission at high pump powers. The InAs insertion improves heterointerface quality, which was confirmed by an increase in PL intensity.
|Number of pages||3|
|Journal||Applied Physics A: Materials Science and Processing|
|State||Published - 1 Aug 2000|