Recombination dynamics and carrier lifetimes in highly mismatched ZnTeO alloys

Yan Cheng Lin*, Ming Jui Tasi, Wu-Ching Chou, Wen-Hao Chang, Wei-Kuo Chen, Tooru Tanaka, Qixin Guo, Mitsuhiro Nishio

*Corresponding author for this work

Research output: Contribution to journalArticle

13 Scopus citations

Abstract

This study investigates the recombination dynamics in highly mismatched ZnTeO alloys using time-resolved photoluminescence (PL) spectroscopy. The large PL energy redshift with increasing O content and the disappearance of the ZnTe emission verify the O-induced conduction band anticrossing effect. The incorporation of O generates electron localization below the E- conduction subband tail, which provide additional optical transitions and cause complex recombination mechanisms. Photoexcited free electrons in both the E + and the E- conduction subbands favor rapid relaxation to low energy states. Additionally, temperature-independent long carrier lifetimes (>130.0 ns) that are induced by localized electrons increase with O concentration.

Original languageEnglish
Article number261905
JournalApplied Physics Letters
Volume103
Issue number26
DOIs
StatePublished - 23 Dec 2013

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