A new recessed-channel SOI (RCSOI) technology has been developed for fabricating u1trathin SOI MOSFET's with low source/drain series resistance. Thin-film fully depleted SOI MOSFET's with channel film thickness of 72 nm have been fabricated with the RCSOI technology. The new structure demonstrated a 70% reduction in source/drain series resistance compared with conventional processes. In the deep-submicron region, more than 80% improvement in saturation drain current and transconductance over conventional devices was achieved using the RCSOI technology. The new technology would also facilitate the use of silicide for further reducing the series resistance.