Recessed-Channel Structure for Fabricating Ultrathin SOI MOSFET with Low Series Resistance

Mansun Chan, Fariborz Assaderaghi, Chen-Ming Hu, Ping K. Ko, Stephen A. Parke

Research output: Contribution to journalArticlepeer-review

42 Scopus citations


A new recessed-channel SOI (RCSOI) technology has been developed for fabricating u1trathin SOI MOSFET's with low source/drain series resistance. Thin-film fully depleted SOI MOSFET's with channel film thickness of 72 nm have been fabricated with the RCSOI technology. The new structure demonstrated a 70% reduction in source/drain series resistance compared with conventional processes. In the deep-submicron region, more than 80% improvement in saturation drain current and transconductance over conventional devices was achieved using the RCSOI technology. The new technology would also facilitate the use of silicide for further reducing the series resistance.

Original languageEnglish
Pages (from-to)22-24
Number of pages3
JournalIEEE Electron Device Letters
Issue number1
StatePublished - 1 Jan 1994

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