Recess-Free Normally-off GaN MIS-HEMT Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure

Ping Cheng Han, Zong Zheng Yan, Chia Hsun Wu, Edward Yi Chang, Yu Hsuan Ho

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

In this work, a recess-free thin AlGaN barrier metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) with high threshold voltage of 3.19V, high maximum drain current of 716 mA/mm and high breakdown voltage of 906V is demonstrated for the first time. Three different thin barrier structures were compared for device performance. In addition, long-term reliability measurements were carried out to investigate the interface quality of the devices with and without gate recess. The recess-free device exhibits a smaller Vth hysteresis and a more stable performance than those of gate recessed devices. Overall, the recess-free thin barrier AlGaN/GaN MIS-HEMT demonstrates promising performance for power switching applications.

Original languageEnglish
Title of host publication2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages427-430
Number of pages4
ISBN (Electronic)9781728105796
DOIs
StatePublished - May 2019
Event31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019 - Shanghai, China
Duration: 19 May 201923 May 2019

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
Volume2019-May
ISSN (Print)1063-6854

Conference

Conference31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019
CountryChina
CityShanghai
Period19/05/1923/05/19

Keywords

  • AlGaN
  • HEMT
  • normally-off
  • recess-free
  • thin barrier

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    Han, P. C., Yan, Z. Z., Wu, C. H., Chang, E. Y., & Ho, Y. H. (2019). Recess-Free Normally-off GaN MIS-HEMT Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure. In 2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019 (pp. 427-430). [8757675] (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2019-May). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISPSD.2019.8757675