Developed is a new Recess-Channel technology that significantly reduces the source/drain series resistance. It is does not only serve useful for ultra-thin SOI MOSFET fabrication with arbitrary silicon film thickness, but it is also use in conjunction with the Recess-Channel technique.
|Number of pages||2|
|State||Published - 1 Dec 1993|
|Event||Proceedings of the IEEE International SOI Conference - Palm Springs, CA, USA|
Duration: 5 Oct 1993 → 7 Oct 1993
|Conference||Proceedings of the IEEE International SOI Conference|
|City||Palm Springs, CA, USA|
|Period||5/10/93 → 7/10/93|