Recess channel structure for reducing source/drain series resistance in ultra-thin SOI MOSFET

Mansun Chan*, Fariborz Assaderaghi, Stephen A. Parke, Selina S. Yuen, Chen-Ming Hu, Ping K. Ko

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

12 Scopus citations

Abstract

Developed is a new Recess-Channel technology that significantly reduces the source/drain series resistance. It is does not only serve useful for ultra-thin SOI MOSFET fabrication with arbitrary silicon film thickness, but it is also use in conjunction with the Recess-Channel technique.

Original languageEnglish
Pages172-173
Number of pages2
StatePublished - 1 Dec 1993
EventProceedings of the IEEE International SOI Conference - Palm Springs, CA, USA
Duration: 5 Oct 19937 Oct 1993

Conference

ConferenceProceedings of the IEEE International SOI Conference
CityPalm Springs, CA, USA
Period5/10/937/10/93

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