Recent progress on GaN-based electron devices

Yasuhiro Uemoto*, Yutaka Hirose, Tomohiro Murata, Hidetoshi Ishida, Masahiro Hikita, Manabu Yanagihara, Kaoru Inoue, Tsuyoshi Tanaka, Daisuke Ueda, Takashi Egawa

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

We present results of some novel AlGaN/GaN heterojunction field-effect transistors (HFETs) specifically developed for RF front-end and power applications. To reduce the parasitic resistance, two unique techniques: selective Si doping into contact area and a superlattice (SL) cap structure, are developed. With the selective Si doping method, a transistor with an on-state resistance as low as 1.86 Ω·mm and a Tx/Rx switch IC with very low insertion loss (0.26 dB) and very high power handling capability (PldB over 40 dBm) were obtained. With the SL cap HFETs, an ultra low source resistance of 0.4 Ω-mm was achieved and excellent DC and RF performances were demonstrated. The typical characteristics of these HFETs are: maximum transconductance of over 400 mS/mm, maximum drain current of 1.2 A/mm, cut-off frequency of 60 GHz, maximum oscillation frequency of 140 GHz, and a very low noise figure of 0.7 dB with 15 dB gain at 12 GHz. For power applications, in order to significantly reduce fabrication cost, we fabricated the AlGaN/GaN HFET on a conductive Si substrate with a source-via grounding (SVG) structure. The device has a very low on-state sheet resistance of 1.9 mΩ·-cm2, a high off-state breakdown voltage of 350 V, and a current handling capability of 150 A. In addition, a sub-nano second switching response with tr of 98 ps and tf of 96 ps with a current density as high as 2.0 kA/cm2 is demonstrated for the first time.

Original languageEnglish
Pages (from-to)469-477
Number of pages9
JournalInternational Journal of High Speed Electronics and Systems
Volume16
Issue number2
DOIs
StatePublished - 1 Jun 2006

Keywords

  • AlGaN/GaN HFET
  • Low noise amplifier
  • Noise figure
  • On-state resistance
  • RF switch
  • Si doping
  • Source resistance
  • Source via
  • Superlattice cap

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  • Cite this

    Uemoto, Y., Hirose, Y., Murata, T., Ishida, H., Hikita, M., Yanagihara, M., Inoue, K., Tanaka, T., Ueda, D., & Egawa, T. (2006). Recent progress on GaN-based electron devices. International Journal of High Speed Electronics and Systems, 16(2), 469-477. https://doi.org/10.1142/S0129156406003795