Recent enhancements in BSIM6 bulk MOSFET model

H. Agarwal, S. Venugopalan, M. A. Chalkiadaki, N. Paydavosi, J. P. Duarte, S. Agnihotri, C. Yadav, P. Kushwaha, Y. S. Chauhan, C. C. Enz, A. Niknejad, Chen-Ming Hu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

25 Scopus citations

Abstract

In this paper, we discuss the recent enhancements made in the BSIM6 bulk MOSFET model. BSIM6 is the latest compact model of bulk MOSFET from BSIM group which have body referenced charge based core. Junction capacitance model is improved over BSIM4 and is infinitely continuous around Vbs=V bd=0V. Symmetry of the model is successfully validated by performing Gummel Symmetry Test (GST) in DC and symmetry test for capacitances in AC. Self heating model is also included in BSIM6 and test results are reported. Model capabilities are compared against an advanced 40nm CMOS technology and it is observed that simulated results are in excellent agreement with the measured data.

Original languageEnglish
Title of host publication2013 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013
Pages53-56
Number of pages4
DOIs
StatePublished - 31 Dec 2013
Event18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013 - Glasgow, United Kingdom
Duration: 3 Sep 20135 Sep 2013

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013
CountryUnited Kingdom
CityGlasgow
Period3/09/135/09/13

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    Agarwal, H., Venugopalan, S., Chalkiadaki, M. A., Paydavosi, N., Duarte, J. P., Agnihotri, S., Yadav, C., Kushwaha, P., Chauhan, Y. S., Enz, C. C., Niknejad, A., & Hu, C-M. (2013). Recent enhancements in BSIM6 bulk MOSFET model. In 2013 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013 (pp. 53-56). [6650572] (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). https://doi.org/10.1109/SISPAD.2013.6650572