Recent advances on electromigration in very-large-scale-integration of interconnects

King-Ning Tu*

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

847 Scopus citations

Abstract

The electromigration in Al,Cu and solder was compared on the basis of the ratio of their melting point to the device operating temperature of 100°C. The effects of microstructure, solute and stress on electromigration in Al, Cu and solder were found to be different. It was found that in mean-time-to-failure analysis, the time taken to nucleate a void is much longer than the growth of the void in Al and solder interconnects.

Original languageEnglish
Pages (from-to)5451-5473
Number of pages23
JournalJournal of Applied Physics
Volume94
Issue number9
DOIs
StatePublished - 1 Nov 2003

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