Recent advances in GaN power switching devices

Satoshi Tamura; Yoshiharu Anda; Masahiro Ishida; Yasuhiro Uemoto; Tetsuzo Ueda; Tsuyoshi Tanaka; Daisuke Ueda

doi:10.1109/CSICS.2010.5619659

Recent advances in GaN power switching devices

Satoshi Tamura^*, Yoshiharu Anda, Masahiro Ishida, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

22 Scopus citations

Abstract

Recent advances in GaN power switching devices are reviewed. A new normall-off GaN transistor called Gate Injection Transistor (GIT) increases drain current by conductivity modulation. The GIT is fabricated on cost-effective Si substrates by novel MOCVD technology enabling crack-free and smooth surfaces over 6-inch wafer. These technologies with thermally stable device isolation by Fe ion implantation are applied for a monolithic inverter IC. This is the world fist demonstration of a GaN inverter IC for motor drive, which reduces the total operating loss by 42% from that by the IGBT-based inverter. These technologies are indispensable for wide-spread use of GaN power switching transistors in the future.

Original language	English
Title of host publication	2010 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010 - Technical Digest 2010
DOIs	https://doi.org/10.1109/CSICS.2010.5619659
State	Published - 20 Dec 2010
Event	2010 32nd IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010 - Monterey, CA, United States Duration: 3 Oct 2010 → 6 Oct 2010

Publication series

Name	Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
ISSN (Print)	1550-8781

Conference

Conference	2010 32nd IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010
Country	United States
City	Monterey, CA
Period	3/10/10 → 6/10/10

Keywords

GaN
Gate injection transistor
Inverter IC
Power switching transistor

Access to Document

10.1109/CSICS.2010.5619659

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Tamura, S., Anda, Y., Ishida, M., Uemoto, Y., Ueda, T., Tanaka, T., & Ueda, D. (2010). Recent advances in GaN power switching devices. In 2010 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010 - Technical Digest 2010 [5619659] (Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC). https://doi.org/10.1109/CSICS.2010.5619659

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abstract = "Recent advances in GaN power switching devices are reviewed. A new normall-off GaN transistor called Gate Injection Transistor (GIT) increases drain current by conductivity modulation. The GIT is fabricated on cost-effective Si substrates by novel MOCVD technology enabling crack-free and smooth surfaces over 6-inch wafer. These technologies with thermally stable device isolation by Fe ion implantation are applied for a monolithic inverter IC. This is the world fist demonstration of a GaN inverter IC for motor drive, which reduces the total operating loss by 42% from that by the IGBT-based inverter. These technologies are indispensable for wide-spread use of GaN power switching transistors in the future.",

keywords = "GaN, Gate injection transistor, Inverter IC, Power switching transistor",

author = "Satoshi Tamura and Yoshiharu Anda and Masahiro Ishida and Yasuhiro Uemoto and Tetsuzo Ueda and Tsuyoshi Tanaka and Daisuke Ueda",

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Tamura, S, Anda, Y, Ishida, M, Uemoto, Y, Ueda, T, Tanaka, T & Ueda, D 2010, Recent advances in GaN power switching devices. in 2010 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010 - Technical Digest 2010., 5619659, Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC, 2010 32nd IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010, Monterey, CA, United States, 3/10/10. https://doi.org/10.1109/CSICS.2010.5619659

Recent advances in GaN power switching devices. / Tamura, Satoshi; Anda, Yoshiharu; Ishida, Masahiro; Uemoto, Yasuhiro; Ueda, Tetsuzo; Tanaka, Tsuyoshi; Ueda, Daisuke.

2010 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010 - Technical Digest 2010. 2010. 5619659 (Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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