Recent advances in GaN power switching devices

Satoshi Tamura*, Yoshiharu Anda, Masahiro Ishida, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

22 Scopus citations

Abstract

Recent advances in GaN power switching devices are reviewed. A new normall-off GaN transistor called Gate Injection Transistor (GIT) increases drain current by conductivity modulation. The GIT is fabricated on cost-effective Si substrates by novel MOCVD technology enabling crack-free and smooth surfaces over 6-inch wafer. These technologies with thermally stable device isolation by Fe ion implantation are applied for a monolithic inverter IC. This is the world fist demonstration of a GaN inverter IC for motor drive, which reduces the total operating loss by 42% from that by the IGBT-based inverter. These technologies are indispensable for wide-spread use of GaN power switching transistors in the future.

Original languageEnglish
Title of host publication2010 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010 - Technical Digest 2010
DOIs
StatePublished - 20 Dec 2010
Event2010 32nd IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010 - Monterey, CA, United States
Duration: 3 Oct 20106 Oct 2010

Publication series

NameTechnical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
ISSN (Print)1550-8781

Conference

Conference2010 32nd IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010
CountryUnited States
CityMonterey, CA
Period3/10/106/10/10

Keywords

  • GaN
  • Gate injection transistor
  • Inverter IC
  • Power switching transistor

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