@inproceedings{10eb86fa00de4c2997c129282af952a7,
title = "Recent advances in GaN power switching devices",
abstract = "Recent advances in GaN power switching devices are reviewed. A new normall-off GaN transistor called Gate Injection Transistor (GIT) increases drain current by conductivity modulation. The GIT is fabricated on cost-effective Si substrates by novel MOCVD technology enabling crack-free and smooth surfaces over 6-inch wafer. These technologies with thermally stable device isolation by Fe ion implantation are applied for a monolithic inverter IC. This is the world fist demonstration of a GaN inverter IC for motor drive, which reduces the total operating loss by 42% from that by the IGBT-based inverter. These technologies are indispensable for wide-spread use of GaN power switching transistors in the future.",
keywords = "GaN, Gate injection transistor, Inverter IC, Power switching transistor",
author = "Satoshi Tamura and Yoshiharu Anda and Masahiro Ishida and Yasuhiro Uemoto and Tetsuzo Ueda and Tsuyoshi Tanaka and Daisuke Ueda",
year = "2010",
month = dec,
day = "20",
doi = "10.1109/CSICS.2010.5619659",
language = "English",
isbn = "9781424474387",
series = "Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC",
booktitle = "2010 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010 - Technical Digest 2010",
note = "null ; Conference date: 03-10-2010 Through 06-10-2010",
}