Recent advances and future trends of ULSI technologies

Hiroshi Iwai*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

In recent few years, significant progress has been seen in the study of 0.1 and sub-0.1 micron gate length MOSFETs. In this paper, recent advance in the small-geometry MOSFETs is described and the limit of MOSFET downsizing is predicted. Then, a concept of future ULSI in 2010's is discussed.

Original languageEnglish
Title of host publicationESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference
EditorsMassimo Rudan, Giorgio Baccarani
PublisherIEEE Computer Society
Pages45-52
Number of pages8
ISBN (Electronic)286332196X
ISBN (Print)9782863321966
StatePublished - 1996
Event26th European Solid State Device Research Conference, ESSDERC 1996 - Bologna, Italy
Duration: 9 Sep 199611 Sep 1996

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Conference

Conference26th European Solid State Device Research Conference, ESSDERC 1996
CountryItaly
CityBologna
Period9/09/9611/09/96

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    Iwai, H. (1996). Recent advances and future trends of ULSI technologies. In M. Rudan, & G. Baccarani (Eds.), ESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference (pp. 45-52). [5436213] (European Solid-State Device Research Conference). IEEE Computer Society.