Realization of an IGBT gate driver with dualphase turn-on/off gate control

You Da Chen*, Albert Chin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Adding passive components in a conventional IGBT gate driver is a simple method to reduce transient current/voltage spikes during switching, but the extra devices and power loss make them less attractive. Alternatively, active gate drivers can improve the switching behavior, but are limited to specific devices and applications from the increased complexity of functions and feedback topology. This article reports a simple design for a general purpose gate driver methodology to reduce the peak reverse recovery current and over-voltage. The proposed topology was verified using a foundry 0.25- μm BCD technology and experimental testing Remarkable improvements of crucial current overshoot during turn-on, voltage overshoot during turn-off, and the associated switching loss are demonstrated using novel dual-phase turn-on and turn-off gate controls.

Original languageEnglish
Article number9224897
Pages (from-to)1089-1095
Number of pages7
JournalIEEE Journal of the Electron Devices Society
Volume8
DOIs
StatePublished - 2020

Keywords

  • Active gate driver
  • insulated gate bipolar transistor (IGBT)
  • reverse recovery current
  • switching loss
  • two-step driver

Fingerprint Dive into the research topics of 'Realization of an IGBT gate driver with dualphase turn-on/off gate control'. Together they form a unique fingerprint.

Cite this