Reactive ion etching of ZnO using the H2/CH4 and H2/CH4/Ar mixtures

Kuang Po Hsueh; Ren Jie Hou; Cheng-Huang Kuo; Chun Ju Tun

doi:10.1117/12.802840

Reactive ion etching of ZnO using the H₂/CH₄ and H₂/CH₄/Ar mixtures

Kuang Po Hsueh^*, Ren Jie Hou, Cheng-Huang Kuo, Chun Ju Tun

^*Corresponding author for this work

Institute of Lighting and Energy Photonics

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

This work investigates the reactive ions etching (RIE) physical properties of n-type ZnO using H₂/CH₄ and H₂/CH ₄/Ar mixtures by varying the gas flow ratio, the radio-frequency (rf) plasma power and the chamber pressure. Atomic force microscopy (AFM) results and surface topographies are discussed. Although the etching rate of the n-ZnO at an H₂/CH₄ flow rate of 100/0 sccm, a work pressure of 100 mTorr and an rf power of 300 W is lower than under any other conditions, the rms roughness of 43.78 nm is the highest, and supports the application of roughened transparent contact layer (TCL) in light-emitting diodes (LEDs). The dynamics associated with the high etching rate were highly efficient at an H₂/CH₄/Ar flow rate of 38/5/57 sccm, a work pressure of 150 mTorr and an rf power of 300 W. In addition, the ZnO with thermal annealing were studied. The slower etching rate of annealed n-ZnO is observed due to an increase the crystal quality of the ZnO films after thermal annealing which consists with the x-ray diffraction (XRD) results.

Original language	English
Article number	71350D
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	7135
DOIs	https://doi.org/10.1117/12.802840
State	Published - 1 Dec 2008
Event	Optoelectronic Materials and Devices III - Hangzhou, China Duration: 27 Oct 2008 → 30 Oct 2008

Keywords

Dry etching
Reactive ions etching
Roughness
ZnO

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title = "Reactive ion etching of ZnO using the H2/CH4 and H2/CH4/Ar mixtures",

abstract = "This work investigates the reactive ions etching (RIE) physical properties of n-type ZnO using H2/CH4 and H2/CH 4/Ar mixtures by varying the gas flow ratio, the radio-frequency (rf) plasma power and the chamber pressure. Atomic force microscopy (AFM) results and surface topographies are discussed. Although the etching rate of the n-ZnO at an H2/CH4 flow rate of 100/0 sccm, a work pressure of 100 mTorr and an rf power of 300 W is lower than under any other conditions, the rms roughness of 43.78 nm is the highest, and supports the application of roughened transparent contact layer (TCL) in light-emitting diodes (LEDs). The dynamics associated with the high etching rate were highly efficient at an H2/CH4/Ar flow rate of 38/5/57 sccm, a work pressure of 150 mTorr and an rf power of 300 W. In addition, the ZnO with thermal annealing were studied. The slower etching rate of annealed n-ZnO is observed due to an increase the crystal quality of the ZnO films after thermal annealing which consists with the x-ray diffraction (XRD) results.",

keywords = "Dry etching, Reactive ions etching, Roughness, ZnO",

author = "Hsueh, {Kuang Po} and Hou, {Ren Jie} and Cheng-Huang Kuo and Tun, {Chun Ju}",

year = "2008",

month = dec,

day = "1",

doi = "10.1117/12.802840",

language = "English",

volume = "7135",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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T1 - Reactive ion etching of ZnO using the H2/CH4 and H2/CH4/Ar mixtures

AU - Hsueh, Kuang Po

AU - Hou, Ren Jie

AU - Kuo, Cheng-Huang

AU - Tun, Chun Ju

PY - 2008/12/1

Y1 - 2008/12/1

N2 - This work investigates the reactive ions etching (RIE) physical properties of n-type ZnO using H2/CH4 and H2/CH 4/Ar mixtures by varying the gas flow ratio, the radio-frequency (rf) plasma power and the chamber pressure. Atomic force microscopy (AFM) results and surface topographies are discussed. Although the etching rate of the n-ZnO at an H2/CH4 flow rate of 100/0 sccm, a work pressure of 100 mTorr and an rf power of 300 W is lower than under any other conditions, the rms roughness of 43.78 nm is the highest, and supports the application of roughened transparent contact layer (TCL) in light-emitting diodes (LEDs). The dynamics associated with the high etching rate were highly efficient at an H2/CH4/Ar flow rate of 38/5/57 sccm, a work pressure of 150 mTorr and an rf power of 300 W. In addition, the ZnO with thermal annealing were studied. The slower etching rate of annealed n-ZnO is observed due to an increase the crystal quality of the ZnO films after thermal annealing which consists with the x-ray diffraction (XRD) results.

AB - This work investigates the reactive ions etching (RIE) physical properties of n-type ZnO using H2/CH4 and H2/CH 4/Ar mixtures by varying the gas flow ratio, the radio-frequency (rf) plasma power and the chamber pressure. Atomic force microscopy (AFM) results and surface topographies are discussed. Although the etching rate of the n-ZnO at an H2/CH4 flow rate of 100/0 sccm, a work pressure of 100 mTorr and an rf power of 300 W is lower than under any other conditions, the rms roughness of 43.78 nm is the highest, and supports the application of roughened transparent contact layer (TCL) in light-emitting diodes (LEDs). The dynamics associated with the high etching rate were highly efficient at an H2/CH4/Ar flow rate of 38/5/57 sccm, a work pressure of 150 mTorr and an rf power of 300 W. In addition, the ZnO with thermal annealing were studied. The slower etching rate of annealed n-ZnO is observed due to an increase the crystal quality of the ZnO films after thermal annealing which consists with the x-ray diffraction (XRD) results.

KW - Dry etching

KW - Reactive ions etching

KW - Roughness

KW - ZnO

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DO - 10.1117/12.802840

M3 - Conference article

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JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

SN - 0277-786X

M1 - 71350D

Y2 - 27 October 2008 through 30 October 2008

ER -

Reactive ion etching of ZnO using the H₂/CH₄ and H₂/CH₄/Ar mixtures

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Keywords

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