In the past, CCl2F2 had been widely used in the dry etching process of the GaAs-based materials. However, it causes ozone depletion and is detrimental to the environment. In order to prevent further ozone depletion, it is necessary to search for some substituted gases. In this study, chloric gases, like BCl3 and SiCl4, were used to provide an alternative way for the reactive ion etch of GaAs and AlGaAs. To provide high etching selectivity between GaAs and AlGaAs, a fluorine containing gas SF6 is added, to increase the etch rate of GaAs than that of AlGaAs, which is due to the formation of non-volatile solid AlF3. In this study the etching characteristics of the BCl3/SF6, SiCl4/SF6 were studied and high etching selectivity between AlGaAs/GaAs is achieved.
|Number of pages||5|
|Journal||Materials Research Society Symposium - Proceedings|
|State||Published - 1 Dec 1994|
|Event||Proceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA|
Duration: 4 Apr 1994 → 8 Apr 1994