Reaction of O(1D) with silane: Direct production of SiO

K. Okuda, K. Yunoki, T. Oguchi, Y. Murakami, A. Tezaki, M. Koshi*, Hiroyuki Matsui

*Corresponding author for this work

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Abstract

The reaction of O(1D) with silane has been investigated by using a laser-induced fluorescence (LIF) technique. O(1D) was produced by the ArF laser photolysis of N2O and was detected by LIF at 115.2 nm. The overall rate constant of the O(1D) + SiH4 reaction was directly determined from the decay rates of O(1D) to be (3.0 ± 0.3) × 10-10 cm3 molecule-1 s-1 at room temperature. H and OH were detected as direct products of this reaction. By calibrating the LIF intensities of H and OH using the reference reaction of O(1D) + H2 → H + OH, product branching fractions of H and OH were determined to be 0.21 and 0.36, respectively. In addition to these products, SiO was also detected by the LIF method. The production rate of SiO was found to be in good agreement with the decay rate of O(1D), indicating that SiO is one of the direct products of the O(1D) + SiH4 reaction. The yield of SiO was estimated to be about 6-13% on the basis of the LIF intensity. The vibrational distribution of SiO (up to v″ = 11) was well described by a prior distribution derived from a conventional statistical theory with the assumption that SiO was produced by the multiple step unimolecular decomposition of excited silanol formed by the insertion of O(1D) into SiH4. A possible reaction pathway to produce SiO is discussed.

Original languageEnglish
Pages (from-to)2365-2370
Number of pages6
JournalJournal of Physical Chemistry A
Volume101
Issue number13
DOIs
StatePublished - 27 Mar 1997

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    Okuda, K., Yunoki, K., Oguchi, T., Murakami, Y., Tezaki, A., Koshi, M., & Matsui, H. (1997). Reaction of O(1D) with silane: Direct production of SiO. Journal of Physical Chemistry A, 101(13), 2365-2370. https://doi.org/10.1021/jp9622389