Rare earth metal oxide gate thin films prepared by e-beam deposition

S. Ohmi, S. Akama, A. Kikuchi, I. Kashiwagi, C. Ohshima, J. Taguchi, H. Yamamoto, C. Kobayashi, K. Sato, A. Takeda, K. Oshima, H. Ishiwara, H. Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

11 Scopus citations

Abstract

In this paper, we report the results of the examination of various rare earth oxides for future CMOS gate insulator applications. The electrical and physical characteristics of various rare earth metal oxides have been investigated. Most of the rare earth metal oxides showed excellent electrical properties and smooth surface especially, La2O3. Other materials such as Dy2O3 and Lu2O3 showed good electrical characteristics in terms of frequency dependence, however, it was found that it is necessary to obtain the optimum process conditions (deposition temperature, RTA temperature, RTA ambient etc.) for each rare earth oxide material.

Original languageEnglish
Title of host publicationExtended Abstracts of International Workshop on Gate Insulator, IWGI 2001
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages200-204
Number of pages5
ISBN (Electronic)4891140216, 9784891140212
DOIs
StatePublished - 2001
EventInternational Workshop on Gate Insulator, IWGI 2001 - Tokyo, Japan
Duration: 1 Nov 20012 Nov 2001

Publication series

NameExtended Abstracts of International Workshop on Gate Insulator, IWGI 2001

Conference

ConferenceInternational Workshop on Gate Insulator, IWGI 2001
CountryJapan
CityTokyo
Period1/11/012/11/01

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