Rapid thermal processing of arsenic-implanted polysilicon on very thin oxide

J. Y.C. Sun; R. Angelucci; C. Y. Wong; G. Scilla; E. Landi

Rapid thermal processing of arsenic-implanted polysilicon on very thin oxide

J. Y.C. Sun^*, R. Angelucci, C. Y. Wong, G. Scilla, E. Landi

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We demonstrated the feasibility and advantages of using rapid thermal annealing (RTA) to achieve a proper work-function for arsenic-implanted polysilicon gate on 7 nm SiO₂ in a dual work function (n⁺ and p⁺) poly-gate CMOS process. Interface states and fixed oxide charge due to RTA can be annealed out at 500°C in forming gas. Time-zero and time-dependent breakdown results show that the integrity of 7 nm gate oxide can be preserved after RTA. The diffusivity of arsenic in polysilicon under RTA is found to be consistent with literature data from conventional furnace anneals.

Original language	English
Title of host publication	ESSDERC 1988 - 18th European Solid State Device Research Conference
Editors	J.-P. Nougier, D. Gasquet
Publisher	IEEE Computer Society
Pages	C4401-C4404
ISBN (Electronic)	2868830994
ISBN (Print)	9782868830999
State	Published - 1988
Event	18th European Solid State Device Research Conference, ESSDERC 1988 - Montpellier, France Duration: 13 Sep 1988 → 16 Sep 1988

Publication series

Name	European Solid-State Device Research Conference
ISSN (Print)	1930-8876

Conference

Conference	18th European Solid State Device Research Conference, ESSDERC 1988
Country	France
City	Montpellier
Period	13/09/88 → 16/09/88

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@inproceedings{fd9223623c4c42e587cb863be843b102,

title = "Rapid thermal processing of arsenic-implanted polysilicon on very thin oxide",

abstract = "We demonstrated the feasibility and advantages of using rapid thermal annealing (RTA) to achieve a proper work-function for arsenic-implanted polysilicon gate on 7 nm SiO2 in a dual work function (n+ and p+) poly-gate CMOS process. Interface states and fixed oxide charge due to RTA can be annealed out at 500°C in forming gas. Time-zero and time-dependent breakdown results show that the integrity of 7 nm gate oxide can be preserved after RTA. The diffusivity of arsenic in polysilicon under RTA is found to be consistent with literature data from conventional furnace anneals.",

author = "Sun, {J. Y.C.} and R. Angelucci and Wong, {C. Y.} and G. Scilla and E. Landi",

year = "1988",

language = "English",

isbn = "9782868830999",

series = "European Solid-State Device Research Conference",

publisher = "IEEE Computer Society",

pages = "C4401--C4404",

editor = "J.-P. Nougier and D. Gasquet",

booktitle = "ESSDERC 1988 - 18th European Solid State Device Research Conference",

address = "United States",

note = "null ; Conference date: 13-09-1988 Through 16-09-1988",

}

Sun, JYC, Angelucci, R, Wong, CY, Scilla, G & Landi, E 1988, Rapid thermal processing of arsenic-implanted polysilicon on very thin oxide. in J-P Nougier & D Gasquet (eds), ESSDERC 1988 - 18th European Solid State Device Research Conference., 5436942, European Solid-State Device Research Conference, IEEE Computer Society, pp. C4401-C4404, 18th European Solid State Device Research Conference, ESSDERC 1988, Montpellier, France, 13/09/88.

Rapid thermal processing of arsenic-implanted polysilicon on very thin oxide. / Sun, J. Y.C.; Angelucci, R.; Wong, C. Y.; Scilla, G.; Landi, E.

ESSDERC 1988 - 18th European Solid State Device Research Conference. ed. / J.-P. Nougier; D. Gasquet. IEEE Computer Society, 1988. p. C4401-C4404 5436942 (European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Rapid thermal processing of arsenic-implanted polysilicon on very thin oxide

AU - Sun, J. Y.C.

AU - Angelucci, R.

AU - Wong, C. Y.

AU - Scilla, G.

AU - Landi, E.

PY - 1988

Y1 - 1988

N2 - We demonstrated the feasibility and advantages of using rapid thermal annealing (RTA) to achieve a proper work-function for arsenic-implanted polysilicon gate on 7 nm SiO2 in a dual work function (n+ and p+) poly-gate CMOS process. Interface states and fixed oxide charge due to RTA can be annealed out at 500°C in forming gas. Time-zero and time-dependent breakdown results show that the integrity of 7 nm gate oxide can be preserved after RTA. The diffusivity of arsenic in polysilicon under RTA is found to be consistent with literature data from conventional furnace anneals.

AB - We demonstrated the feasibility and advantages of using rapid thermal annealing (RTA) to achieve a proper work-function for arsenic-implanted polysilicon gate on 7 nm SiO2 in a dual work function (n+ and p+) poly-gate CMOS process. Interface states and fixed oxide charge due to RTA can be annealed out at 500°C in forming gas. Time-zero and time-dependent breakdown results show that the integrity of 7 nm gate oxide can be preserved after RTA. The diffusivity of arsenic in polysilicon under RTA is found to be consistent with literature data from conventional furnace anneals.

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M3 - Conference contribution

AN - SCOPUS:84907743278

SN - 9782868830999

T3 - European Solid-State Device Research Conference

SP - C4401-C4404

BT - ESSDERC 1988 - 18th European Solid State Device Research Conference

A2 - Nougier, J.-P.

A2 - Gasquet, D.

PB - IEEE Computer Society

Y2 - 13 September 1988 through 16 September 1988

ER -