Rapid thermal annealed InGaN/GaN Flip-Chip LEDs

W. S. Chen*, S. C. Shei, S. J. Chang, Y. K. Su, W. C. Lai, Cheng-Huang Kuo, Y. C. Lin, C. S. Chang, T. K. Ko, Y. P. Hsu, C. F. Shen

*Corresponding author for this work

Research output: Contribution to journalArticle

18 Scopus citations

Abstract

Nitride-based flip-chip (FC) light-emitting diodes (LEDs) emitting at 465 nm with Ni transparent ohmic contact layers and Ag reflective mirrors were fabricated. With an incident light wavelength of 465 nm, it was found that transmittance of normalized 300°C rapid thermal annealed (RTA) Ni(2.5 nm) Mas 93% while normalized reflectance of 300°C RTA Ni(2.5 nm)/Ag(200 nm) was 92%. It was also found that 300°C RTA Ni(2.5 nm) formed good ohmic contact on n+ short-period-superlattice structure with specific contact resistance of 7.8 × 10-4 Ω·cm2. With 20-mA current injection, it was found that forward voltage and output power were 3.15 V and 16.2 mW for FC LED with 300°C RTA Ni(2.5 nm)/Ag(200 nm). Furthermore, it was found that reliabilities of FC LEDs were good.

Original languageEnglish
Pages (from-to)32-36
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume53
Issue number1
DOIs
StatePublished - 1 Jan 2006

Keywords

  • Flip-chip (FC)
  • GaN
  • Light-emitting diodes (LEDs)
  • Rapid thermal anneal (RTA)
  • Reflective mirrors
  • Transparent ohmic contact

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    Chen, W. S., Shei, S. C., Chang, S. J., Su, Y. K., Lai, W. C., Kuo, C-H., Lin, Y. C., Chang, C. S., Ko, T. K., Hsu, Y. P., & Shen, C. F. (2006). Rapid thermal annealed InGaN/GaN Flip-Chip LEDs. IEEE Transactions on Electron Devices, 53(1), 32-36. https://doi.org/10.1109/TED.2005.860760