Random work functions induced DC and dynamic characteristic fluctuations in 16-nm high-κ/metal gate CMOS device and digital circuit

Hui Wen Cheng, Yiming Li*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

We study nanosized metal grains induced DC and timing fluctuations in 16 nm high-κ/metal gate (HKMG) MOSFET devices. A localized work function fluctuation (LWKF) on device's DC/AC and CMOS inverter's characteristics is advanced using an experimentally validated 3D device simulation which cannot be well modeled using an averaged WKF (AWKF) method. DC characteristics estimated by the LWKF method are 1.5 and 1.6 times larger than that by the AWKF method for N- and P-MOSFETs, respectively, due to random grain number and position effects. The delay time of high-to-low and low-to-high of the CMOS inverter calculated by the AWKF method are underestimated by 1.29 and 1.19 times, compared with the LWKF method.

Original languageEnglish
Title of host publicationProceedings of the 3rd Asia Symposium on Quality Electronic Design, ASQED 2011
Pages203-206
Number of pages4
DOIs
StatePublished - 2011
Event3rd Asia Symposium on Quality Electronic Design, ASQED 2011 - Kuala Lumpur, Malaysia
Duration: 19 Jul 201120 Jul 2011

Publication series

NameProceedings of the 3rd Asia Symposium on Quality Electronic Design, ASQED 2011

Conference

Conference3rd Asia Symposium on Quality Electronic Design, ASQED 2011
CountryMalaysia
CityKuala Lumpur
Period19/07/1120/07/11

Keywords

  • 16-nm-gate MOSFET
  • average work function fluctuation method
  • grain orientation
  • high-κ/ metal gate
  • Localized work function fluctuation method
  • nanosized metal grain
  • three-dimensional device simulation
  • threshold voltage

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    Cheng, H. W., & Li, Y. (2011). Random work functions induced DC and dynamic characteristic fluctuations in 16-nm high-κ/metal gate CMOS device and digital circuit. In Proceedings of the 3rd Asia Symposium on Quality Electronic Design, ASQED 2011 (pp. 203-206). [6111745] (Proceedings of the 3rd Asia Symposium on Quality Electronic Design, ASQED 2011). https://doi.org/10.1109/ASQED.2011.6111745