Random work function variation induced threshold voltage fluctuation in 16-nm bulk FinFET devices with high-κ-metal-gate material

Hui Wen Cheng*, Yiming Li

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

11 Scopus citations

Abstract

The random work-function (WK) induced threshold voltage fluctuation (σVth) in 16-nm TiN metal-gate fin-type field effect transistors (FinFETs) is explored and modeled by using an experimentally validated Monte Carlo simulation approach. The influences of metal-grain size and device geometry aspect ratio on the random WK-induced σVth are studied analytically. The results of this study allow us to identify suitable materials for metal gate and to clarify reduction of the σV th owing to WKF. Among four different gate materials, the titanium nitride possesses the smallest σVth due to small size of metal grains.

Original languageEnglish
Title of host publication2010 14th International Workshop on Computational Electronics, IWCE 2010
Pages331-334
Number of pages4
DOIs
StatePublished - 2010
Event2010 14th International Workshop on Computational Electronics, IWCE 2010 - Pisa, Italy
Duration: 26 Oct 201029 Oct 2010

Publication series

Name2010 14th International Workshop on Computational Electronics, IWCE 2010

Conference

Conference2010 14th International Workshop on Computational Electronics, IWCE 2010
CountryItaly
CityPisa
Period26/10/1029/10/10

Keywords

  • Analytical expression
  • FinFET
  • Metal-gate
  • Modeling and simulation
  • Random work function
  • Threshold voltage fluctuation
  • TiN

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