Random work function induced DC characteristic fluctuation in 16-nm high-κ/metal gate bulk and SOI FinFETs

Hsin Wen Su; Yu Yu Chen; Chieh Yang Chen; Hui Wen Cheng; Han Tung Chang; Yiming Li

Random work function induced DC characteristic fluctuation in 16-nm high-κ/metal gate bulk and SOI FinFETs

Hsin Wen Su^*, Yu Yu Chen, Chieh Yang Chen, Hui Wen Cheng, Han Tung Chang, Yiming Li

^*Corresponding author for this work

Department of Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This work studies the metal gate's work function fluctuation induced DC characteristic fluctuation in the 16-nm bulk and silicon-on-insulator (SOI) fin-type field effect transistor (FinFET) devices using an experimentally calibrated 3D device simulation. The method of localized work function fluctuation simulation enables us to estimate local fluctuations including the nanosized grain's random effects of FinFET with TiN/HfO ₂ gate stacks. The result of this study shows characteristic fluctuation strongly depends upon the size of localized nanosized metal grains. The shape of grains does have marginal influence on device's variability.

Original language	English
Title of host publication	Nanotechnology 2012
Subtitle of host publication	Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012
Pages	31-34
Number of pages	4
State	Published - 2012
Event	Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012 - Santa Clara, CA, United States Duration: 18 Jun 2012 → 21 Jun 2012

Publication series

Name	Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012

Conference

Conference	Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012
Country	United States
City	Santa Clara, CA
Period	18/06/12 → 21/06/12

Keywords

3D device simulation
Bulk / SOI FinFET
Characteristic fluctuation
Metal gate
Random work function

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Su, H. W., Chen, Y. Y., Chen, C. Y., Cheng, H. W., Chang, H. T., & Li, Y. (2012). Random work function induced DC characteristic fluctuation in 16-nm high-κ/metal gate bulk and SOI FinFETs. In Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012 (pp. 31-34). (Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012).

Su, Hsin Wen ; Chen, Yu Yu ; Chen, Chieh Yang ; Cheng, Hui Wen ; Chang, Han Tung ; Li, Yiming. / Random work function induced DC characteristic fluctuation in 16-nm high-κ/metal gate bulk and SOI FinFETs. Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012. 2012. pp. 31-34 (Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012).

@inproceedings{6cbd02cb1be0479f8c628655876c48b8,

title = "Random work function induced DC characteristic fluctuation in 16-nm high-κ/metal gate bulk and SOI FinFETs",

abstract = "This work studies the metal gate's work function fluctuation induced DC characteristic fluctuation in the 16-nm bulk and silicon-on-insulator (SOI) fin-type field effect transistor (FinFET) devices using an experimentally calibrated 3D device simulation. The method of localized work function fluctuation simulation enables us to estimate local fluctuations including the nanosized grain's random effects of FinFET with TiN/HfO 2 gate stacks. The result of this study shows characteristic fluctuation strongly depends upon the size of localized nanosized metal grains. The shape of grains does have marginal influence on device's variability.",

keywords = "3D device simulation, Bulk / SOI FinFET, Characteristic fluctuation, Metal gate, Random work function",

author = "Su, {Hsin Wen} and Chen, {Yu Yu} and Chen, {Chieh Yang} and Cheng, {Hui Wen} and Chang, {Han Tung} and Yiming Li",

year = "2012",

language = "English",

isbn = "9781466562752",

series = "Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012",

pages = "31--34",

booktitle = "Nanotechnology 2012",

note = "null ; Conference date: 18-06-2012 Through 21-06-2012",

}

Su, HW, Chen, YY, Chen, CY, Cheng, HW, Chang, HT & Li, Y 2012, Random work function induced DC characteristic fluctuation in 16-nm high-κ/metal gate bulk and SOI FinFETs. in Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012. Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012, pp. 31-34, Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012, Santa Clara, CA, United States, 18/06/12.

Random work function induced DC characteristic fluctuation in 16-nm high-κ/metal gate bulk and SOI FinFETs. / Su, Hsin Wen; Chen, Yu Yu; Chen, Chieh Yang; Cheng, Hui Wen; Chang, Han Tung; Li, Yiming.

Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012. 2012. p. 31-34 (Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Random work function induced DC characteristic fluctuation in 16-nm high-κ/metal gate bulk and SOI FinFETs

AU - Su, Hsin Wen

AU - Chen, Yu Yu

AU - Chen, Chieh Yang

AU - Cheng, Hui Wen

AU - Chang, Han Tung

AU - Li, Yiming

PY - 2012

Y1 - 2012

N2 - This work studies the metal gate's work function fluctuation induced DC characteristic fluctuation in the 16-nm bulk and silicon-on-insulator (SOI) fin-type field effect transistor (FinFET) devices using an experimentally calibrated 3D device simulation. The method of localized work function fluctuation simulation enables us to estimate local fluctuations including the nanosized grain's random effects of FinFET with TiN/HfO 2 gate stacks. The result of this study shows characteristic fluctuation strongly depends upon the size of localized nanosized metal grains. The shape of grains does have marginal influence on device's variability.

AB - This work studies the metal gate's work function fluctuation induced DC characteristic fluctuation in the 16-nm bulk and silicon-on-insulator (SOI) fin-type field effect transistor (FinFET) devices using an experimentally calibrated 3D device simulation. The method of localized work function fluctuation simulation enables us to estimate local fluctuations including the nanosized grain's random effects of FinFET with TiN/HfO 2 gate stacks. The result of this study shows characteristic fluctuation strongly depends upon the size of localized nanosized metal grains. The shape of grains does have marginal influence on device's variability.

KW - 3D device simulation

KW - Bulk / SOI FinFET

KW - Characteristic fluctuation

KW - Metal gate

KW - Random work function

UR - http://www.scopus.com/inward/record.url?scp=84864920831&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84864920831

SN - 9781466562752

T3 - Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012

SP - 31

EP - 34

BT - Nanotechnology 2012

Y2 - 18 June 2012 through 21 June 2012

ER -

Su HW, Chen YY, Chen CY, Cheng HW, Chang HT, Li Y. Random work function induced DC characteristic fluctuation in 16-nm high-κ/metal gate bulk and SOI FinFETs. In Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012. 2012. p. 31-34. (Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012).