@inproceedings{6cbd02cb1be0479f8c628655876c48b8,
title = "Random work function induced DC characteristic fluctuation in 16-nm high-κ/metal gate bulk and SOI FinFETs",
abstract = "This work studies the metal gate's work function fluctuation induced DC characteristic fluctuation in the 16-nm bulk and silicon-on-insulator (SOI) fin-type field effect transistor (FinFET) devices using an experimentally calibrated 3D device simulation. The method of localized work function fluctuation simulation enables us to estimate local fluctuations including the nanosized grain's random effects of FinFET with TiN/HfO 2 gate stacks. The result of this study shows characteristic fluctuation strongly depends upon the size of localized nanosized metal grains. The shape of grains does have marginal influence on device's variability.",
keywords = "3D device simulation, Bulk / SOI FinFET, Characteristic fluctuation, Metal gate, Random work function",
author = "Su, {Hsin Wen} and Chen, {Yu Yu} and Chen, {Chieh Yang} and Cheng, {Hui Wen} and Chang, {Han Tung} and Yiming Li",
year = "2012",
language = "English",
isbn = "9781466562752",
series = "Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012",
pages = "31--34",
booktitle = "Nanotechnology 2012",
note = "null ; Conference date: 18-06-2012 Through 21-06-2012",
}