Random work function induced DC characteristic fluctuation in 16-nm high-κ/metal gate bulk and SOI FinFETs

Hsin Wen Su*, Yu Yu Chen, Chieh Yang Chen, Hui Wen Cheng, Han Tung Chang, Yiming Li

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This work studies the metal gate's work function fluctuation induced DC characteristic fluctuation in the 16-nm bulk and silicon-on-insulator (SOI) fin-type field effect transistor (FinFET) devices using an experimentally calibrated 3D device simulation. The method of localized work function fluctuation simulation enables us to estimate local fluctuations including the nanosized grain's random effects of FinFET with TiN/HfO 2 gate stacks. The result of this study shows characteristic fluctuation strongly depends upon the size of localized nanosized metal grains. The shape of grains does have marginal influence on device's variability.

Original languageEnglish
Title of host publicationNanotechnology 2012
Subtitle of host publicationElectronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012
Pages31-34
Number of pages4
StatePublished - 2012
EventNanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012 - Santa Clara, CA, United States
Duration: 18 Jun 201221 Jun 2012

Publication series

NameTechnical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012

Conference

ConferenceNanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012
CountryUnited States
CitySanta Clara, CA
Period18/06/1221/06/12

Keywords

  • 3D device simulation
  • Bulk / SOI FinFET
  • Characteristic fluctuation
  • Metal gate
  • Random work function

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