Random telegraph signal noise arising from grain boundary traps in nano-scale poly-Si nanowire thin-film transistors

Chen Ming Lee, Bing-Yue Tsui

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Nano-scale poly-Si thin-film transistor (TFT) is a promising device for the three-dimensional integrated circuits (3D IC) and 3D stacked flash memories. Random telegraph signal noise (RTN) arising from grain boundary traps is identified and a grain-boundary-induced-fluctuation (GBIF) model is proposed for the first time. Amonia plasma treatment can suppress this RTN source effectively.

Original languageEnglish
Title of host publication2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013
DOIs
StatePublished - 12 Aug 2013
Event2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013 - Hsinchu, Taiwan
Duration: 22 Apr 201324 Apr 2013

Publication series

Name2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013

Conference

Conference2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013
CountryTaiwan
CityHsinchu
Period22/04/1324/04/13

Fingerprint Dive into the research topics of 'Random telegraph signal noise arising from grain boundary traps in nano-scale poly-Si nanowire thin-film transistors'. Together they form a unique fingerprint.

  • Cite this

    Lee, C. M., & Tsui, B-Y. (2013). Random telegraph signal noise arising from grain boundary traps in nano-scale poly-Si nanowire thin-film transistors. In 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013 [6545598] (2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013). https://doi.org/10.1109/VLSI-TSA.2013.6545598