Random Telegraph Noise of Deep-Submicrometer MOSFET’s

K. K. Hung*, P. K. Ko, Chen-Ming Hu, Yiu Chung Cheng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

231 Scopus citations

Abstract

The random telegraph noise exhibited by deep-submicrometer MOSFET’s with very small channel area (≤1 µm2) at room temperature was studied. Analysis of the amplitude of the current fluctuations reveals that the trapped charges generate noise through modulation of the carrier mobility in addition to the carrier number. Parameters needed for modeling the carrier mobility fluctuation effect on the flicker noise in conventional MOSFET’s have been extracted directly from the random telegraph noise data.

Original languageEnglish
Pages (from-to)90-92
Number of pages3
JournalIEEE Electron Device Letters
Volume11
Issue number2
DOIs
StatePublished - 1 Jan 1990

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