Random Telegraph noise in 1X-nm CMOS silicide contacts and a method to extract trap density

Min Cheng Chen*, Chia Yi Lin, Bo Yuan Chen, Chang Hsien Lin, Guo Wei Huang, Chia Hua Ho, Ta-Hui Wang, Chen-Ming Hu, Fu Liang Yang

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

The behavior of random telegraph noise was affected by nickel silicide barrier height engineering in advanced nano-CMOS technologies. Contact resistance fluctuations with magnitude of up to 40% were observed when a Schottky barrier was reduced to 0.2 eV. The large contact resistance instability is attributed to the barrier modification by positive charge trapping and detrapping in a Schottky contact. The prevalence and magnitude of the noise are dependent on the contact area, trap density, trap energy, and the silicide Schottky barrier height. In this letter, we propose a fast method to extract the density of responsible contact traps.

Original languageEnglish
Article number6151006
Pages (from-to)591-593
Number of pages3
JournalIEEE Electron Device Letters
Volume33
Issue number4
DOIs
StatePublished - 1 Apr 2012

Keywords

  • Contact resistance
  • Poisson distribution
  • random telegraph noise (RTN)
  • silicide-process-induced traps

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    Chen, M. C., Lin, C. Y., Chen, B. Y., Lin, C. H., Huang, G. W., Ho, C. H., Wang, T-H., Hu, C-M., & Yang, F. L. (2012). Random Telegraph noise in 1X-nm CMOS silicide contacts and a method to extract trap density. IEEE Electron Device Letters, 33(4), 591-593. [6151006]. https://doi.org/10.1109/LED.2011.2182029