Random-dopant-induced DC characteristic fluctuations in 16-nm-gate LAC and inLAC MOSFET devices

Thet Thet Khaing, Hui Wen Cheng, Kuo Fu Lee, Yiming Li*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Channel engineering is an effective way to suppress the random-dopant-induced characteristic fluctuation in nanometer-scale MOSFET devices. In this work, we study the effect of random dopants on characteristic fluctuations in 16-nm-gate lateral asymmetric channel (LAC) MOSFET devices. Devices with high channel doping concentration near the drain-end (the so-called inverse LAC; inLAC) can effectively improve DC characteristics fluctuation induced by random dopants. We have observed that the DC characteristic of the proposed inLAC MOSFET is less sensitive to random dopant, compared with conventional planar and LAC devices. Consequently, the inLAC MOSFET is further optimized for the best DC characteristic fluctuation reductions.

Original languageEnglish
Title of host publicationICSE 2010 - Proceedings IEEE International Conference on Semiconductor Electronics
Pages237-240
Number of pages4
DOIs
StatePublished - 2010
Event2010 IEEE International Conference on Semiconductor Electronics, ICSE 2010 - Melaka, Malaysia
Duration: 28 Jun 201030 Jun 2010

Publication series

NameIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Conference

Conference2010 IEEE International Conference on Semiconductor Electronics, ICSE 2010
CountryMalaysia
CityMelaka
Period28/06/1030/06/10

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