Channel engineering is an effective way to suppress the random-dopant-induced characteristic fluctuation in nanometer-scale MOSFET devices. In this work, we study the effect of random dopants on characteristic fluctuations in 16-nm-gate lateral asymmetric channel (LAC) MOSFET devices. Devices with high channel doping concentration near the drain-end (the so-called inverse LAC; inLAC) can effectively improve DC characteristics fluctuation induced by random dopants. We have observed that the DC characteristic of the proposed inLAC MOSFET is less sensitive to random dopant, compared with conventional planar and LAC devices. Consequently, the inLAC MOSFET is further optimized for the best DC characteristic fluctuation reductions.