Raman scattering of longitudinal-optical-phonon-plasmon coupling in Cl-doped ZnSe under high pressure

Y. C. Lin, C. H. Chiu, W. C. Fan, C. H. Chia, S. L. Yang, D. S. Chuu, M. C. Lee, Wei-Kuo Chen, Wen-Hao Chang, Wu-Ching Chou*

*Corresponding author for this work

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Abstract

The vibrational, electronic, and crystalline properties of n -type chlorine-doped ZnSe (ZnSe:Cl) layers with a carrier concentration from 8.2× 1015 to 1.8× 1018 cm-3 are studied by Raman spectroscopy. The spectral line shapes of the longitudinal-optical-phonon and plasmon coupling mode are analyzed using the Raman scattering efficiency and the dielectric function to obtain the electron densities and mobility. The splitting of the transverse-optical (TO) phonon and the redshift of the chlorine-related impurity vibration mode are clearly observed when pressure is applied. The semiconductor-to-metal phase transition pressure of ZnSe:Cl layers declines as the carrier concentration increases, indicating that n -type doping reduces crystal stability. Additionally, the pressure-induced weakening of the longitudinal-optical-phonon-plasmon coupling efficiency suggests that pressure tends to degrade the n -type characteristic of ZnSe:Cl because of the emergence of the new deep donorlike state.

Original languageEnglish
Article number123510
JournalJournal of Applied Physics
Volume102
Issue number12
DOIs
StatePublished - 1 Dec 2007

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