Raman scattering in ternary AlAsxSb1 - X films

H. C. Lin*, J. Ou, C. H. Hsu, Wei-Kuo Chen, M. C. Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

Thin films of the ternary AlAsxSb1 - x alloys, prepared by metalorganic chemical vapor deposition, were studied by Raman scattering. The Raman shifts show one-mode behavior and the forbidden TO phonon scattering is observable due to the relaxed selection rule. Our results of the mixed compounds can be interpreted using the spatial correlation model. Moreover, the enhanced scattering was observed at 2.15 and 2.8 eV which are attributable to the E0 and E1 transitions of AlAs and AlSb.

Original languageEnglish
Pages (from-to)547-551
Number of pages5
JournalSolid State Communications
Volume107
Issue number10
DOIs
StatePublished - 29 Jul 1998

Keywords

  • A. semiconductors
  • A. thin films
  • D. optical properties
  • D. phonons

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