Raman and X-ray studies of InN films grown at different temperatures by metalorganic vapor phase epitaxy

Wei-Kuo Chen*, Heng Ching Lin, Yung Chung Pan, Jehn Ou, Chen Ke Shu, Wen Hsiung Chen, Ming Chih Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

We used Raman scattering and X-ray diffraction (XRD) methods to investigate the properties of InN films deposited at temperatures ranging from 325 to 600°C by metalorganic vapor phase epitaxy (MOVPE). Significant line broadening, softening and intensity evolution were observed from films at growth temperatures between 375 and 450°C. This can be attributed to the formation of mixed hexagonal and cubic structures and related dislocation defects. As the growth temperature was further increased, the hexagonal phase was found to be dominant in the deposited InN film.

Original languageEnglish
Pages (from-to)4870-4871
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume37
Issue number9 A
DOIs
StatePublished - 1 Sep 1998

Keywords

  • InN
  • MOVPE
  • Raman scattering
  • X-ray

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