Radio-frequency Superiority of Poly-Si TFTs with T-Shaped Gate and Air Spacers for IoT Applications

Z. Y. Yang, Y. A. Huang, Horng-Chih Lin, Pei-Wen Li, K. M. Chen, G. W. Huang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

We report the first of its kind, self-organized poly-Si TFT structure of T-shaped silicided gate, air-spacers, as well as silicided source/drain in a single etching process followed by Ni self-aligned silicidation (SALICIDE) process. Process-controlled tunability of the T-shaped gate length and sidewall air-spacers have been demonstrated, enabling a practically achievable core building block for high-performance radio-frequency (RF) poly-Si TFTs. Detailed structural and electrical properties of the T-gate poly-Si TFTs were assessed using transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDS), and gate resistance, sidewall capacitance, as well as dc and RF measurements. Notably, unity-gain frequency of 12.1 GHz is recorded for our T-gate poly-Si TFTs with channel length of 96 nm.

Original languageEnglish
Title of host publication2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages178-180
Number of pages3
ISBN (Print)9781538637111
DOIs
StatePublished - 26 Jul 2018
Event2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Kobe, Japan
Duration: 13 Mar 201816 Mar 2018

Publication series

Name2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

Conference

Conference2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
CountryJapan
CityKobe
Period13/03/1816/03/18

Keywords

  • T-shaped gate
  • internet of things
  • radio-frequency
  • selective etching
  • thin-film transistor

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