Radio-frequency silicon-on-insulator modeling considering the neutral-body effect

Sheng Chun Wang; Pin Su; Kun Ming Chen; Chien Ting Lin; Victor Liang; Guo Wei Huang

doi:10.1143/JJAP.47.2087

Radio-frequency silicon-on-insulator modeling considering the neutral-body effect

Sheng Chun Wang^*, Pin Su, Kun Ming Chen, Chien Ting Lin, Victor Liang, Guo Wei Huang

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

This paper presents small-signal modeling for state-of-the-art radio-frequency (RF) silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistors (MOSFETs). Especially, we have incorporated the neutral-body effect in our RF SOI model. This effect is significant in both RF extrinsic and intrinsic modeling stages. In addition, we have developed a physically-accurate parameter extraction method based on our analytical expressions. Our modeling results agree well with the measured data and can capture the frequency dependences of both output conductance and capacitance in the GHz frequency region. The anomalous S₂₂ and S₂₁ behaviors as well as the output conductance rising effect observed in our measurements can be predicted and described using the proposed model.

Original language	English
Pages (from-to)	2087-2091
Number of pages	5
Journal	Japanese journal of applied physics
Volume	47
Issue number	4 PART 1
DOIs	https://doi.org/10.1143/JJAP.47.2087
State	Published - 18 Apr 2008

Keywords

MOSFETs
Neutral-body effect
Parameter extraction
RF
Small-signal model
SOI

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10.1143/JJAP.47.2087

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title = "Radio-frequency silicon-on-insulator modeling considering the neutral-body effect",

abstract = "This paper presents small-signal modeling for state-of-the-art radio-frequency (RF) silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistors (MOSFETs). Especially, we have incorporated the neutral-body effect in our RF SOI model. This effect is significant in both RF extrinsic and intrinsic modeling stages. In addition, we have developed a physically-accurate parameter extraction method based on our analytical expressions. Our modeling results agree well with the measured data and can capture the frequency dependences of both output conductance and capacitance in the GHz frequency region. The anomalous S22 and S21 behaviors as well as the output conductance rising effect observed in our measurements can be predicted and described using the proposed model.",

keywords = "MOSFETs, Neutral-body effect, Parameter extraction, RF, Small-signal model, SOI",

author = "Wang, {Sheng Chun} and Pin Su and Chen, {Kun Ming} and Lin, {Chien Ting} and Victor Liang and Huang, {Guo Wei}",

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AU - Wang, Sheng Chun

AU - Su, Pin

AU - Chen, Kun Ming

AU - Lin, Chien Ting

AU - Liang, Victor

AU - Huang, Guo Wei

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