Radio-frequency silicon-on-insulator modeling considering the neutral-body effect

Sheng Chun Wang*, Pin Su, Kun Ming Chen, Chien Ting Lin, Victor Liang, Guo Wei Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

This paper presents small-signal modeling for state-of-the-art radio-frequency (RF) silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistors (MOSFETs). Especially, we have incorporated the neutral-body effect in our RF SOI model. This effect is significant in both RF extrinsic and intrinsic modeling stages. In addition, we have developed a physically-accurate parameter extraction method based on our analytical expressions. Our modeling results agree well with the measured data and can capture the frequency dependences of both output conductance and capacitance in the GHz frequency region. The anomalous S22 and S21 behaviors as well as the output conductance rising effect observed in our measurements can be predicted and described using the proposed model.

Original languageEnglish
Pages (from-to)2087-2091
Number of pages5
JournalJapanese journal of applied physics
Volume47
Issue number4 PART 1
DOIs
StatePublished - 18 Apr 2008

Keywords

  • MOSFETs
  • Neutral-body effect
  • Parameter extraction
  • RF
  • Small-signal model
  • SOI

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