Radio frequency power performance enhancement for asymmetric lightly doped drain metal-oxide-semiconductor field-effect transistors on SiC substrate

Tsu Chang*, Hsuan Ling Kao, S. L. Liu, Joseph D.S. Deng, K. Y. Horng, Albert Chin

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

In this paper we report the DC characteristics and radio frequency (RF) power performance improvement as high as 6.6% of asymmetric lightly doped drain metal-oxide-semiconductor field-effect transistors (asymmetric LDD MOSFET, AMOSFET) with 50-μm-thick silicon substrates on SiC substrates. The self-heating and parasitic effects of large size AMOSFETs with 50-mm-thick silicon on SiC substrates are reduced owing to good heat dissipation and less lossy behaviors of thinned silicon substrates and SiC substrates. Therefore, the power gain, saturation output power, and power added efficiency of AMOSFETs with 50-μm-thick Si substrates mounted on SiC substrates is improved.

Original languageEnglish
Article number014104
JournalJapanese Journal of Applied Physics
Volume49
Issue number1 Part 1
DOIs
StatePublished - 19 Apr 2010

Fingerprint Dive into the research topics of 'Radio frequency power performance enhancement for asymmetric lightly doped drain metal-oxide-semiconductor field-effect transistors on SiC substrate'. Together they form a unique fingerprint.

  • Cite this