Radiative recombination of indirect exciton in type-II ZnSeTe/ZnSe multiple quantum wells

Chin Hau Chia*, Wen Chung Fan, Yen Chen Lin, Wu-Ching Chou

*Corresponding author for this work

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

The tunability of the emission energy, oscillator strength and photoluminescence (PL) efficiency by varying the well thickness and excitation density was demonstrated in the ZnSe0.8Te0.2/ZnSe multiple quantum wells. A significant blueshift about 260 meV of the PL peak energy was observed as the well width decreased from 5 to 1 nm. An extraordinary long lifetime (300 ns) of the recombination for the widest sample was detected. The binding energy of the indirect excitons is determined as 12 meV for the thinnest sample. The reduction of PL efficiency by thermal energy is greatly suppressed by employing a high excitation power.

Original languageEnglish
Pages (from-to)956-959
Number of pages4
JournalJournal of Luminescence
Volume131
Issue number5
DOIs
StatePublished - 1 May 2011

Keywords

  • Exciton
  • Time-resolved photoluminescence
  • Type-II quantum well
  • ZnSeTe

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