Radiative recombination of indirect exciton in type-II ZnSeTe/ZnSe multiple quantum wells

Chin Hau Chia; Wen Chung Fan; Yen Chen Lin; Wu-Ching Chou

doi:10.1016/j.jlumin.2010.12.031

Radiative recombination of indirect exciton in type-II ZnSeTe/ZnSe multiple quantum wells

Chin Hau Chia^*, Wen Chung Fan, Yen Chen Lin, Wu-Ching Chou

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article

4 Scopus citations

Abstract

The tunability of the emission energy, oscillator strength and photoluminescence (PL) efficiency by varying the well thickness and excitation density was demonstrated in the ZnSe_0.8Te_0.2/ZnSe multiple quantum wells. A significant blueshift about 260 meV of the PL peak energy was observed as the well width decreased from 5 to 1 nm. An extraordinary long lifetime (300 ns) of the recombination for the widest sample was detected. The binding energy of the indirect excitons is determined as 12 meV for the thinnest sample. The reduction of PL efficiency by thermal energy is greatly suppressed by employing a high excitation power.

Original language	English
Pages (from-to)	956-959
Number of pages	4
Journal	Journal of Luminescence
Volume	131
Issue number	5
DOIs	https://doi.org/10.1016/j.jlumin.2010.12.031
State	Published - 1 May 2011

Keywords

Exciton
Time-resolved photoluminescence
Type-II quantum well
ZnSeTe

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title = "Radiative recombination of indirect exciton in type-II ZnSeTe/ZnSe multiple quantum wells",

abstract = "The tunability of the emission energy, oscillator strength and photoluminescence (PL) efficiency by varying the well thickness and excitation density was demonstrated in the ZnSe0.8Te0.2/ZnSe multiple quantum wells. A significant blueshift about 260 meV of the PL peak energy was observed as the well width decreased from 5 to 1 nm. An extraordinary long lifetime (300 ns) of the recombination for the widest sample was detected. The binding energy of the indirect excitons is determined as 12 meV for the thinnest sample. The reduction of PL efficiency by thermal energy is greatly suppressed by employing a high excitation power.",

keywords = "Exciton, Time-resolved photoluminescence, Type-II quantum well, ZnSeTe",

author = "Chia, {Chin Hau} and Fan, {Wen Chung} and Lin, {Yen Chen} and Wu-Ching Chou",

year = "2011",

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doi = "10.1016/j.jlumin.2010.12.031",

language = "English",

volume = "131",

pages = "956--959",

journal = "Journal of Luminescence",

issn = "0022-2313",

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T1 - Radiative recombination of indirect exciton in type-II ZnSeTe/ZnSe multiple quantum wells

AU - Chia, Chin Hau

AU - Fan, Wen Chung

AU - Lin, Yen Chen

AU - Chou, Wu-Ching

PY - 2011/5/1

Y1 - 2011/5/1

N2 - The tunability of the emission energy, oscillator strength and photoluminescence (PL) efficiency by varying the well thickness and excitation density was demonstrated in the ZnSe0.8Te0.2/ZnSe multiple quantum wells. A significant blueshift about 260 meV of the PL peak energy was observed as the well width decreased from 5 to 1 nm. An extraordinary long lifetime (300 ns) of the recombination for the widest sample was detected. The binding energy of the indirect excitons is determined as 12 meV for the thinnest sample. The reduction of PL efficiency by thermal energy is greatly suppressed by employing a high excitation power.

AB - The tunability of the emission energy, oscillator strength and photoluminescence (PL) efficiency by varying the well thickness and excitation density was demonstrated in the ZnSe0.8Te0.2/ZnSe multiple quantum wells. A significant blueshift about 260 meV of the PL peak energy was observed as the well width decreased from 5 to 1 nm. An extraordinary long lifetime (300 ns) of the recombination for the widest sample was detected. The binding energy of the indirect excitons is determined as 12 meV for the thinnest sample. The reduction of PL efficiency by thermal energy is greatly suppressed by employing a high excitation power.

KW - Exciton

KW - Time-resolved photoluminescence

KW - Type-II quantum well

KW - ZnSeTe

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U2 - 10.1016/j.jlumin.2010.12.031

DO - 10.1016/j.jlumin.2010.12.031

M3 - Article

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VL - 131

SP - 956

EP - 959

JO - Journal of Luminescence

JF - Journal of Luminescence

SN - 0022-2313

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