Rabi flopping of intersubband transitions in GaAs/AlGaAs MQWs

Chih-Wei Luo, K. Reimann*, M. Woerner, T. Elsaesser, R. Hey, K. H. Ploog

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

2 Scopus citations

Abstract

Rabi flopping of intersubband transitions in n-type modulation-doped GaAs/AlGaAs multiple quantum wells is directly observed by electro-optic sampling of ultrashort THz transients with large electric-field amplitudes transmitted through the sample.

Original languageEnglish
StatePublished - 1 Dec 2003
EventTrends in Optics and Photonics Series: Quantum electronics and Laser Science (QELS) - Baltimore, MD., United States
Duration: 1 Jun 20036 Jun 2003

Conference

ConferenceTrends in Optics and Photonics Series: Quantum electronics and Laser Science (QELS)
CountryUnited States
CityBaltimore, MD.
Period1/06/036/06/03

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