We developed a quick experimental technique for evaluating the cumulative plasma charging current density with MOSFETs. A one second stress at 9 volts for gate oxide thickness of 100A is sufficient to force the Fowler-Nordheim tunneling condition to reveal the plasma-induced oxide damages to the MOSFET, then the oxide damages can be easily characterized by I-V measurement. In addition, we suggested an experimental method in estimating the limitation and reliability of the protection diode in the plasma ambient under various plasma charging conditions.
|Number of pages||3|
|State||Published - 1 Jan 1996|
|Event||Proceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID - Santa Clara, CA, USA|
Duration: 13 May 1996 → 14 May 1996
|Conference||Proceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID|
|City||Santa Clara, CA, USA|
|Period||13/05/96 → 14/05/96|