Quick experimental technique in estimating the cumulative plasma charging current with MOSFET and determining the reliability of the protection diode in the plasma ambient

Scott Zheng*, Donggun Park, Nguyen Bui, Chen-Ming Hu, John Yue

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

1 Scopus citations

Abstract

We developed a quick experimental technique for evaluating the cumulative plasma charging current density with MOSFETs. A one second stress at 9 volts for gate oxide thickness of 100A is sufficient to force the Fowler-Nordheim tunneling condition to reveal the plasma-induced oxide damages to the MOSFET, then the oxide damages can be easily characterized by I-V measurement. In addition, we suggested an experimental method in estimating the limitation and reliability of the protection diode in the plasma ambient under various plasma charging conditions.

Original languageEnglish
Pages27-29
Number of pages3
StatePublished - 1 Jan 1996
EventProceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID - Santa Clara, CA, USA
Duration: 13 May 199614 May 1996

Conference

ConferenceProceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID
CitySanta Clara, CA, USA
Period13/05/9614/05/96

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