Quaternary AlInGaN multiple quantum well 368 nm light-emitting diode

Te Chung Wang*, Hao-Chung Kuo, Zheng Hong Lee, Chang Cheng Chuo, Min Ying Tsai, Ching En Tsai, Tsin Dong Lee, Tien-chang Lu, Jim Chi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

We report high output power from AlInGaN multiple quantum well (MQW) ultraviolet light-emitting diodes. The high Al containing cladding layer, electron blocking layer and p-contact layer were chosen for transparency at 365 nm to reduce the internal absorption, reduce electron overflow and enhance output power. The UV output power was as high as 1.52 mW at 20 mA at 368 nm under room temperature CW operation. The maximum output power in CW operation is 11 mW at 170 mA. In this letter, we demonstrate a helpful and easy way to measure and calculate the junction temperature of AlInGaN UVLEDs.

Original languageEnglish
Pages (from-to)582-585
Number of pages4
JournalJournal of Crystal Growth
Volume287
Issue number2
DOIs
StatePublished - 25 Jan 2006

Keywords

  • A1. Photoluminescence
  • B2. III-V semiconductors
  • B3. Electroluminescence
  • B3. Quantum wells

Fingerprint Dive into the research topics of 'Quaternary AlInGaN multiple quantum well 368 nm light-emitting diode'. Together they form a unique fingerprint.

Cite this