Quasisuperlattice storage: A concept of multilevel charge storage

T. C. Chang*, S. T. Yan, Po-Tsun Liu, C. W. Chen, H. H. Wu, S. M. Sze

*Corresponding author for this work

Research output: Contribution to journalArticle

22 Scopus citations

Abstract

The use of a silicon/silicon nitride quasisuperlattice structure as a multilevel charge storage was investigated. The silicon and silicon nitride were used as the charge-trapping layers. The multilevel storage in the quasisuperlattice was found to be the reason of the memory effects. The utilization of the distinguishable charge storages, exhibited by the memory effects, as a memory device of 2 bit per cell was discussed. The Fowler-Nordhein (FN) tunneling was proposed for the 2 bit per cell operation.

Original languageEnglish
Pages (from-to)248-250
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number2
DOIs
StatePublished - 12 Jul 2004

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    Chang, T. C., Yan, S. T., Liu, P-T., Chen, C. W., Wu, H. H., & Sze, S. M. (2004). Quasisuperlattice storage: A concept of multilevel charge storage. Applied Physics Letters, 85(2), 248-250. https://doi.org/10.1063/1.1772873