Quasi-resonant flyback DC/DC converter using GaN power transistors

S. L. Jeng, M. T. Peng, C. Y. Hsu, Wei-Hua Chieng, Jet P.H. Shu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Quasi-resonant flyback converter is realized with the aim to demonstrate the topology feasibility using the normally-on switching behaviour of the gallium nitride (GaN) power transistor. Reference converters utilize GaN and silicon-based MOSET as the switching devices to compare the electric characteristics, and power losses. Quasi-resonant technology offers reduced turn-on losses, resulting in increased efficiency and lower device temperature. The turn-on losses dominate the power losses as the switching frequency of the power supply increases. The combined advantages of gate charge and on-resistance for GaN in the 60 watt reference converter leads to improve the turn-off conduction loss. GaN based power converter provides up to 7.02% improved efficiency over silicon based MOSFETs. The converter performance improvement opens the possibility of fully exploiting the wide advantages of GaN transistors in power electronic application.

Original languageEnglish
Title of host publication26th Electric Vehicle Symposium 2012, EVS 2012
Pages2475-2481
Number of pages7
StatePublished - 1 Dec 2012
Event26th Electric Vehicle Symposium 2012, EVS 2012 - Los Angeles, CA, United States
Duration: 6 May 20129 May 2012

Publication series

Name26th Electric Vehicle Symposium 2012, EVS 2012
Volume4

Conference

Conference26th Electric Vehicle Symposium 2012, EVS 2012
CountryUnited States
CityLos Angeles, CA
Period6/05/129/05/12

Keywords

  • Flyback converter
  • GaN HEMT
  • Soft-switching

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