A simplified FinFET process having self-aligned double-gate advantage was developed. Device fabrication involved the development of silicon films from thermal oxidation of silion on insulator (SOI) wafers. The device was found to be insensitive to channel doping which showed the importance of the gate workfunction for scaling double gate devices.
|Number of pages||2|
|State||Published - 1 Jan 2001|
|Event||Device Research Conference (DRC) - Notre Dame, IN, United States|
Duration: 25 Jun 2001 → 27 Jun 2001
|Conference||Device Research Conference (DRC)|
|City||Notre Dame, IN|
|Period||25/06/01 → 27/06/01|