Quasi-analytical model of ballistic cylindrical surrounding gate nanowire MOSFET

Wanjie Xu*, Hei Wong, Kuniyuki Kakushima, Hiroshi Iwai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

Abstract A quasi-analytical model bas been developed for predicting the current-voltage characteristics of a cylindrical surrounding gate metal-oxide-semiconductor field-effect-transistor (MOSFET) by taking ballistic transport and quantum confinement effects into consideration. Quantum effect was incorporated in the Poisson's equation in a self-consistent way together with the calculated subband energy levels. The model was validated with numerical simulation. Better agreements were obtained as compared with several previous models. Our results further revealed that the top of barrier (ToB) approximation is not accurate enough at large gate and drain biases; tunneling current and better electrostatic model have to be taken into account.

Original languageEnglish
Article number9754
Pages (from-to)111-117
Number of pages7
JournalMicroelectronic Engineering
Volume138
DOIs
StatePublished - 20 Apr 2015

Keywords

  • Ballistic transport
  • Cylindrical surrounding gate MOSFETs
  • Quantum effect
  • Quasi-analytical model

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