Quantum well geometrical effects on two-dimensional electron mobility

Ta-Hui Wang*, Ting Hua Hsieh, Yi Teh Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

A Monte Carlo analysis to study the quantization effects on the low-field electron mobility in various AlGaAs/GaAs/AlGaAs quantum well structures has been performed. The influence of the electron envelop wave-function and the subband structure on the two-dimensional electron scattering rates was evaluated. Our results showed that a maximum two-dimensional electron mobility can be achieved in a quantum well structure where the energy difference between the first subband and the second subband is about two times the polar optical phonon energy.

Original languageEnglish
Pages (from-to)1597-1599
Number of pages3
JournalSolid State Electronics
Volume35
Issue number11
DOIs
StatePublished - 1 Jan 1992

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