A Monte Carlo analysis to study the quantization effects on the low-field electron mobility in various rectangular and triangular AlGaAs/GaAs heterojunction quantum wells has been performed at T = 77K and T = 300K. The influence of the electron envelop wave-function and the subband structure on the two-dimensional electron scattering rates is evaluated. Our result shows that a maximum two-dimensional electron mobility at T = 300K occurs in a quantum well structure where the energy difference between the first subband and the second subband is about two polar optical phonon energy.
|Number of pages||3|
|State||Published - 1 Dec 1992|
|Event||Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn|
Duration: 26 Aug 1992 → 28 Aug 1992
|Conference||Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92|
|Period||26/08/92 → 28/08/92|