Quantum well geometrical effects on two-dimensional electron mobility in AlGaAs/GaAs hetero-structures

Ta-Hui Wang*, T. H. Hsieh, T. W. Chen

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

A Monte Carlo analysis to study the quantization effects on the low-field electron mobility in various rectangular and triangular AlGaAs/GaAs heterojunction quantum wells has been performed at T = 77K and T = 300K. The influence of the electron envelop wave-function and the subband structure on the two-dimensional electron scattering rates is evaluated. Our result shows that a maximum two-dimensional electron mobility at T = 300K occurs in a quantum well structure where the energy difference between the first subband and the second subband is about two polar optical phonon energy.

Original languageEnglish
Pages307-309
Number of pages3
StatePublished - 1 Dec 1992
EventExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn
Duration: 26 Aug 199228 Aug 1992

Conference

ConferenceExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
CityTsukuba, Jpn
Period26/08/9228/08/92

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