Quantum hydrodynamic simulation of discrete-dopant fluctuated physical quantities in nanoscale FinFET

Yiming Li*, Hui Wen Cheng, Ming Hung Han

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

Impact of the discrete dopants on device performance is crucial in determining the behavior of nanoscale semiconductor devices. Atomistic quantum mechanical device simulation for studying the effect of discrete dopants on device's physical quantities is urgent. This work explores the physics of discrete-dopant-induced characteristic fluctuations in 16-nm fin-typed field effect transistor (FinFET) devices. Discrete dopants are statistically positioned in the three-dimensional channel region to examine associated carrier's characteristic, concurrently capturing "dopant concentration variation" and "dopant position fluctuation". An experimentally validated quantum hydrodynamic device simulation was conducted to investigate the potential profile and threshold voltage fluctuations of the 16-nm FinFET. Results of this study provide further insight into the problem of fluctuation and the mechanism of immunity against fluctuation in 16-nm devices.

Original languageEnglish
Pages (from-to)96-98
Number of pages3
JournalComputer Physics Communications
Volume182
Issue number1
DOIs
StatePublished - Jan 2011

Keywords

  • Fluctuation
  • Modeling and simulation
  • Quantum hydrodynamic
  • Random dopant

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