Simple quantitative models of charge displacement due to quantum effect and its influence on gate oxide thickness measurements are presented. An effective oxide thickness (TDC) is introduced which is relevant to MOSFET current modeling. Physical oxide thickness and TDC can be extracted easily from capacitance measurement, and the electrical thickness can be predicted from a target physical thickness using these new models.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|State||Published - 1 Dec 1999|
|Event||Proceedings of the 1999 Symposium on VLSI Technology - Kyoto, Jpn|
Duration: 14 Jun 1999 → 16 Jun 1999