Quantum effect in oxide thickness determination from capacitance measurement

Kevin Yang*, Ya Chin King, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

110 Scopus citations

Abstract

Simple quantitative models of charge displacement due to quantum effect and its influence on gate oxide thickness measurements are presented. An effective oxide thickness (TDC) is introduced which is relevant to MOSFET current modeling. Physical oxide thickness and TDC can be extracted easily from capacitance measurement, and the electrical thickness can be predicted from a target physical thickness using these new models.

Original languageEnglish
Pages (from-to)77-78
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
DOIs
StatePublished - 1 Dec 1999
EventProceedings of the 1999 Symposium on VLSI Technology - Kyoto, Jpn
Duration: 14 Jun 199916 Jun 1999

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