Quantum correction simulation of random dopant-induced threshold voltage fluctuations in nanoscale metal-oxide-semiconductor structures

Yi-Ming Li*, Shao Ming Yu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

In this paper, we explore random dopant-induced threshold voltage fluctuations by directly solving quantum correction model for nanoscale metal-oxide-semiconductor field effect transistors (MOSFETs). To calculate the variance of the threshold voltage of nanoscale MOSFETs, quantum correction model at equilibrium conditions is expanded and numerically solved with perturbation and monotone iterative methods. Fluctuations of threshold voltage resulting from the random dopant, variations of gate oxide thickness and epitaxial layer, and the device width are calculated. Classical and quantum mechanical results are provided to support the conclusions drawn from the theoretical findings. In contrast to traditional quantum Monte Carlo approach and small signal analysis of the Schrödinger-Poisson equations, this approach shows good accuracy and computational efficiency, and is ready for industrial technology computer-aided design application.

Original languageEnglish
Title of host publication2005 5th IEEE Conference on Nanotechnology
Pages715-718
Number of pages4
DOIs
StatePublished - 2005
Event2005 5th IEEE Conference on Nanotechnology - Nagoya, Japan
Duration: 11 Jul 200515 Jul 2005

Publication series

Name2005 5th IEEE Conference on Nanotechnology
Volume2

Conference

Conference2005 5th IEEE Conference on Nanotechnology
CountryJapan
CityNagoya
Period11/07/0515/07/05

Keywords

  • Nanoscale MOSFET
  • Perturbation method
  • Quantum correction modeling and simulation
  • Random dopant
  • Threshold voltage fluctuation

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