Quantum confinement effect in short-channel gate-all-around MOSFETs and its impact on the sensitivity of threshold voltage to process variations

Yu Sheng Wu*, Pin Su

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

We have proposed an analytical model for quantum confinement effects in short-channel Gate-All-Around (GAA) MOSFETs. This model accurately predicts the eigen-energy shift and eigen-function modulation caused by the short channel effects in lightly doped GAA devices. It shows that the threshold voltage (Vth) variation due to channel diameter variation is larger than that due to channel length variation because of the significant quantum confinement in ultra-scaled devices. Our model indicates that the channel diameter of GAA MOSFETs can be optimized to reduce the Vth variation.

Original languageEnglish
Title of host publication2009 IEEE International SOI Conference
DOIs
StatePublished - 28 Dec 2009
Event2009 IEEE International SOI Conference - Foster City, CA, United States
Duration: 5 Oct 20098 Oct 2009

Publication series

NameProceedings - IEEE International SOI Conference
ISSN (Print)1078-621X

Conference

Conference2009 IEEE International SOI Conference
CountryUnited States
CityFoster City, CA
Period5/10/098/10/09

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