Quantum-confined Stark shift in electroreflectance of InAs/InxGa1-xAs self-assembled quantum dots

T. M. Hsu*, Wen-Hao Chang, C. C. Huang, N. T. Yeh, J. I. Chyi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

38 Scopus citations

Abstract

Electroreflectance was employed to study the electric-field effect on the interband transitions of InAs quantum dots embedded in an In0.16Ga0.84As matrix. The electric field caused an asymmetric quantum-confined Stark shift, which revealed a nonzero built-in dipole moment in the quantum dots. We found the ground-state and excited-state dipole moments to be in the same direction. The electron wave functions are distributed near the base of the quantum dot, with their centers located below the hole wave functions. We also observed a symmetric Stark shift in the wetting-layer transitions. This implies that the wetting-layer potential is symmetric, despite its being capped with quantum dots.

Original languageEnglish
Pages (from-to)1760-1762
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number12
DOIs
StatePublished - 19 Mar 2001

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