Quantization effect on capacitance-voltage and current-voltage characteristics of an InAs/AlSb/GaSb interband tunneling diode

L. Yang*, M. C. Wu, Jenn-Fang Chen, Y. K. Chen, G. L. Snider, A. Y. Cho

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

Capacitance-voltage measurements were performed on the InAs/AlSb/GaSb interband tunneling diode at various frequencies. Theoretical analyses using a self-consistent Schrödinger-Poisson solver were found in agreement with the experimental results under the forward-bias condition. The quantization energy of each subband of the electron in the InAs accumulation region is used to predict the tunneling current cutoff voltage in agreement with that of the current-voltage measurements. Therefore, the cutoff of the interband tunneling process is mainly caused by the crossover of the electron subband energy in the InAs conduction band with respect to the valence band of the GaSb electrode due to the increased external bias voltage.

Original languageEnglish
Pages (from-to)4286-4289
Number of pages4
JournalJournal of Applied Physics
Volume68
Issue number8
DOIs
StatePublished - 1 Dec 1990

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