QUANTITATIVE PHYSICAL MODEL FOR TIME-DEPENDENT BREAKDOWN IN SiO//2.

I. C. Chen*, S. Holland, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference article

84 Scopus citations

Abstract

A quantitative breakdown model for thin gate and tunneling oxides based on the physical understanding of oxide breakdown has been developed. Using the model, it is found that longt//B//D of constant voltage stress should be extrapolated according to 1/E//O//X, instead of E//O//X, as widely assumed. It is also found that the charge-to-breakdown Q//B//D is closely related to the hole generation rate alpha . With the help of this model, the correlations among the widely used reliability tests can be readily obtained. One specific example between the constant-voltage and the ramp-voltage stress has been demonstrated, and it is suggested that the ramp-voltage stress can be used to replace the constant-voltage stress provided a conversion diagram is available. A simplified analytical expression for the conversion formula is also provided.

Original languageEnglish
Pages (from-to)24-31
Number of pages8
JournalAnnual Proceedings - Reliability Physics (Symposium)
DOIs
StatePublished - 1 Dec 1985

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